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{{Short description|Type of thyristor device}}The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state.BOOK,www.tib.eu/en/search/id/tema%3ATEMAE96016025009/Study-of-40-A-1000-V-static-induction-thyristor/, Study of 40 A / 1000 V static induction thyristor (SITH), 1994, 1, 205–208, Li, Siyuan, Liu Su, Yang, Jianhong, Sang, Baosheng, Liu, Ruixi, International Academic Publishers, Beijing, China, 978-7-80003-315-5, It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds.JOURNAL,hal.archives-ouvertes.fr/jpa-00244534/document, J. Nishizawa, K. Nakamura, Static induction thyristor, Revue de Physique Appliquée, 1978, 13, 12, 725–728, 10.1051/rphysap:019780013012072500, JOURNAL, ChunJuan Liu, Su Liu, YaJie Bai, Switching performances of static induction thyristor with buried-gate structure, Science China Information Sciences, 2014, 57, 6, 1–6, 10.1007/s11432-013-4955-x, free, JOURNAL, Study of Switching Characteristics of Static Induction Thyristor for Pulsed Power Applications, Bongseong Kim, Kwang-Cheol Ko, Eiki Hotta, IEEE Transactions on Plasma Science, 39, 5, 2011, 901–905, 10.1109/TPS.2010.2099242, 0093-3813, 1939-9375, 630064521, 2011ITPS...39..901K, 32745943,

History

The first static induction thyristor was invented by Japanese engineer Jun-ichi Nishizawa in 1975.BOOK,books.google.com/books?id=e35kJYAlyCgC&pg=PA231, Electronic Inventions and Discoveries: Electronics from its earliest beginnings to the present day, Fourth Edition, 9780750304931, a Drummer, G. W., January 1997, CRC Press, It was capable of conducting large currents with a low forward bias and had a small turn-off time. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation) in 1988. The initial device consisted of a p+nn+ diode and a buried p+ grid.{{cn|date=September 2023}}In 1999, an analytical model of the SITh was developed for the PSPICE circuit simulator.JOURNAL, J. Wang, B.W. Williams, A new static induction thyristor (SITh) analytical model, IEEE Transactions on Power Electronics, 1999, 14, 5, 866–876, 10.1109/63.788483, 1941-0107, 1004551313, 1999ITPE...14..866W, In 2010, a newer version of SITh was developed by Zhang Caizhen, Wang Yongshun, Liu Chunjuan and Wang Zaixing, the new feature of which was its high forward blocking voltage.JOURNAL, Zhang Caizhen, Wang Yongshun, Liu Chunjuan, Wang Zaixing, A new static induction thyristor with high forward blocking voltage and excellent switching performances, Journal of Semiconductors, 31, 034005, 3, 2010, 10.1088/1674-4926/31/3/034005, 250665918, 1674-4926, 827111246,

See also

• Static induction transistor
• MOS composite static induction thyristor

References

{{Reflist}}{{Electronic components}}

External links

• Static induction thyristor

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